2SC4577-6 UT6 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
15V |
| 集电极连续输出电流IC
Collector Current(IC) |
500mA/0.5A |
| 截止频率fT
Transtion Frequency(fT) |
300MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
200~400 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
15mV-160mV |
| 耗散功率Pc
Power Dissipation |
200mW/0.2W |
| Description & Applications |
PNP/NPN Epitaxial planar Silicon transistor Low-Frequency General-Purpose Amp Applications Small-sized package permitting the 2SA1753/2SC45877-applied sets to be made small and slim Low collector-to-emitter saturation voltage |
| 描述与应用 |
PNP/ NPN外延平面硅晶体管 低频 通用放大器应用 小型封装允许2SA1753/2SC45877-应用微小轻薄 集电极到发射极饱和电压低 |
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