2SD1899-Z-E1 D1899 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
60V |
| 集电极连续输出电流IC
Collector Current(IC) |
3A |
| 截止频率fT
Transtion Frequency(fT) |
120MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
100~400 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
140mV/0.14V |
| 耗散功率Pc
Power Dissipation |
2W |
| Description & Applications |
NPN Silicon Epitaxial Transistor 2SD1899-Z is designed for Audio frequency amplifier and switching ,especially in hybird integrated circuits features *high Hfe Hfe=100 to 400 *low Vce Vce=0.3V |
| 描述与应用 |
NPN硅外延晶体管 2SD1899-Z是专为音频放大器和开关，尤其是在混合集成电路 特点 *高HFE HFE=100至400 *低Vce VCE= 0.3V |
| 技术文档PDF下载 |
在线阅读  |
