2SD1935-6 CT6 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
15V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
15V |
| 集电极连续输出电流IC
Collector Current(IC) |
800mA/0.8A |
| 截止频率fT
Transtion Frequency(fT) |
200MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
200~400 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
100mV/0.1V |
| 耗散功率Pc
Power Dissipation |
200mW/0.2W |
| Description & Applications |
PNP/NPN Epitaxial Planar Silicon Transistor Low frequency general purpose Amp Application application *AF power amp,medium speed switching, small -size motor drivers features *large current capacity *low collector to emitter saturation voltage *very small size package permitting sets to be smaller and slimer |
| 描述与应用 |
PNP/ NPN平面外延硅晶体管 低频通用放大器应用 应用 * AF功放，中速开关，小型电机驱动器 特点 *大电流容量 *集电极到发射极饱和电压低 *非常小的封装尺寸，允许套更小，slimer |
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