MUN2113T1 6C 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
集电极连续输出电流IC
Collector Current(IC) |
-100mA/-0.1A |
基极输入电阻R1
Input Resistance(R1) |
47KΩ/Ohm |
基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
电阻比(R1/R2)
Resistance Ratio |
1 |
直流电流增益hFE
DC Current Gain(hFE) |
140 |
截止频率fT
Transtion Frequency(fT) |
|
耗散功率Pc
Power Dissipation |
0.338W/338mW |
Description & Applications |
FEATURES ?bias resistor transistors ?PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network ?Simplifies Circuit Design ?Reduces Board Space ?Reduces Component Count ?Moisture Sensitivity Level: 1 ?ESD Rating ? Human Body Model: Class 1? Machine Model: Class B ?The SC?59 Package Can be Soldered Using Wave or Reflow ?The Modified Gull?Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die ?Pb?Free Packages are Available |
描述与应用 |
特点 ?偏置电阻晶体管 ?PNP硅表面贴装晶体管与单片偏置电阻网络 ?简化电路设计 ?缩小板级空间 ?减少元件数量 ?湿度敏感度等级:1 ?ESD额定值 - 人体模型:第1类- 机器型号:B类 ?SC-59包装可以焊接使用波或回流 ?改进的鸥翼信息过程中吸收热应力消除焊接模具损坏的可能性 ?无铅包可用 |
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