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NDC631N 631 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
4.1A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.075Ω/Ohm @3.6A,2.7V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.4-1V |
| 耗散功率Pd
Power Dissipation |
1.6W |
| Description & Applications |
N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. 4.1 A, 20 V. RDS(ON) = 0.06 W @ VGS = 4.5 V RDS(ON = 0.075 W @ VGS=2.7 V. Proprietary SuperSOT TM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC currentcapability. |
| 描述与应用 |
N沟道逻辑电平增强模式场效应晶体管 概述 这些N沟道逻辑电平增强模式电源领域 场效应晶体管都采用飞兆半导体专有的生产， 高密度，DMOS技术。这非常高密度 过程是量身定做，以尽量减少通态电阻。这些 器件特别适用于低电压应用 笔记本电脑，便携式电话，PCMICA卡， 其它电池供电的电路中快速切换和低 线的功率损耗，需要在一个非常小外形表面 安装包。 TM-6包装设计采用铜 引线框架卓越的热性能和电气性能。 高密度电池设计极低的RDS（ON） 卓越的导通电阻和最大DC电流能力 |
| 技术文档PDF下载 |
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相关型号列表 |
| 型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
详细资料 |
| NDC631N |
631 |
FAIRCHILD |
05+ |
SOT-163/SOT23-6 |
0 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
| NDC631N |
631 |
FAIRCHILD |
05+ |
SOT-163/SOT23-6 |
57200 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
| NDC632P |
632 |
FAIRCHILD |
05+ |
SOT-163/SOT23-6 |
0 |
场效应管FET-MOSFET-P沟道MOSFET P-Channel |
查看 |
| NDC632P |
632 |
FAIRCHILD |
05+ |
SOT-163/SOT23-6 |
11000 |
场效应管FET-MOSFET-P沟道MOSFET P-Channel |
查看 |
| NDC651N |
651 |
FAIRCHILD |
05+ |
SOT-163/SOT23-6 |
0 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
| NDC651N |
651 |
FAIRCHILD |
05+ |
SOT-163/SOT23-6 |
2420 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
| NDC652P |
652 |
FAIRCHILD |
05+nopb875 |
SOT-163/SOT23-6 |
5234 |
场效应管FET-MOSFET-P沟道MOSFET P-Channel |
查看 |
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