NTGS3441T1 PT 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
-8V |
| 最大漏极电流Id
Drain Current |
-1.65A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
135m?@ VGS = -2.5V, ID = -2.9A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.45~-1.5V |
| 耗散功率Pd
Power Dissipation |
500mW/0.5W |
| Description & Applications |
Power MOSFET Features ? Ultra Low RDS(on) ? Higher Efficiency Extending Battery Life ? Miniature TSOP?6 Surface Mount Package ? Pb?Free Package is Available Applications ? Power Management in Portable and Battery?Powered Products, i.e.:Cellular and Cordless Telephones, and PCMCIA Cards |
| 描述与应用 |
功率MOSFET 特点 ?超低RDS（上） ?更高的效率延长电池寿命 ?微型TSOP-6表面贴装封装 ?无铅包装是可用 应用 ?电源管理在便携式和电池供电产品，即：蜂窝，无绳电话，PCMCIA卡 |
| 技术文档PDF下载 |
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