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RHK003N06
 型号:  RHK003N06
 标记/丝印/代码/打字:  RKS
 厂家:  ROHM
 封装:  TO-252/D-PAK
 批号:  07NOPB
 库存数量:  3000
 所属分类:  场效应管FET
  MOSFET-N沟道MOSFET N-Channel
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RHK003N06 RKS 的参数

最大源漏极电压Vds Drain-Source Voltage 60v
最大栅源极电压Vgs(±) Gate-Source Voltage 16v
最大漏极电流Id Drain Current 11A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance 0.107Ω/Ohm @8A,5V
开启电压Vgs(th) Gate-Source Threshold Voltage 1-3V
耗散功率Pd Power Dissipation 38W
Description & Applications 4V Drive Nch MOS FET Silicon N-channel MOS FET Features ? 11A, 60V ? rDS(ON) = 0.107? ? Temperature Compensating PSPICE Model ? Peak Current vs Pulse Width Curve ? UIS Rating Curve ? Related Literature TB334 “Guidelines for Soldering Surface Mount Components to PC Boards
描述与应用 4V驱动N沟道MOS FET 硅N沟道MOS FET ?温度补偿的PSPICE模型 ?峰值电流与脉冲宽度曲线 ?UIS等级曲线 ?相关文献 TB334“指南焊锡表面装载 组件到PC板
技术文档PDF下载 在线阅读

 

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