RN2105F YE 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-100mA/-0.1A |
| 基极输入电阻R1
Input Resistance(R1) |
2.2KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
0.047 |
| 直流电流增益hFE
DC Current Gain(hFE) |
80 |
| 截止频率fT
Transtion Frequency(fT) |
200MHz |
| 耗散功率Pc
Power Dissipation |
0.1W/100mW |
| Description & Applications |
Features ? Transistor Silicon PNP Epitaxial Type (PCT Process) ? With built-in bias resistors ? Simplify circuit design ? Reduce a quantity of parts and manufacturing process ? Complementary to RN1101F~RN1106F Applications ? Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| 描述与应用 |
特点 ?晶体管的硅PNP外延型（PCT工艺） ?借助内置的偏置电阻 ?简化电路设计 ?减少了部件数量和制造工艺 ?互补到RN1101F?RN1106F的 应用 ?开关，逆变电路，接口电路和驱动器电路应用 |
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