RT1P441C P3 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-100mA/-0.1A |
| 基极输入电阻R1
Input Resistance(R1) |
47KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
50 |
| 截止频率fT
Transtion Frequency(fT) |
150MHz |
| 耗散功率Pc
Power Dissipation |
0.15W/150mW |
| Description & Applications |
Features ?Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type ?Built-in bias resistor (R1=47kΩ,R2=47kΩ) APPLICATION ?Inverted circuit,switching circuit,interface circuit, driver circuit |
| 描述与应用 |
特点 ?开关应用硅PNP外延型晶体管，电阻 ?内置偏置电阻（R1=47KΩ，R2=47KΩ） 应用 ?倒电路，开关电路，接口电路，驱动电路 |
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