SI5473DC-T1 B1SAD 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-12V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
8V |
| 最大漏极电流Id
Drain Current |
-8.1A/-0.1A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
22m?@ VGS = -4.5V, ID = -5.9A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.4V~-1.0V |
| 耗散功率Pd
Power Dissipation |
2.5W |
| Description & Applications |
P-Channel 12-V (D-S) MOSFET FEATURES *TrenchFET Power MOSFETS * Low rDS(on) and Excellent Power Handling In Compact Footprint APPLICATIONS *Battery and Load Switch for Portable Devices |
| 描述与应用 |
P沟道12-V（D-S）的MOSFET 特点 *TrenchFET 功率MOSFET *低导通电阻 应用 *用于便携式设备的电池和负载开关 |
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