SI8415DB 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-12V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
8V |
| 最大漏极电流Id
Drain Current |
-7.3A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
0.031Ω @-1A,-4.5V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.4V-1.0V |
| 耗散功率Pd
Power Dissipation |
2.77W |
| Description & Applications |
FEATURES TrenchFET Power MOSFET New MICRO FOOT Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area Ultra-Low On-Resistance |
| 描述与应用 |
功率MOSFET 新的MICRO FOOT？芯片级封装 减少占位面积简介（0.62毫米） 每占位面积导通电阻 超低导通电阻 |
| 技术文档PDF下载 |
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