UN9214J 8D 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA/0.1A |
| 基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
0.213 |
| 直流电流增益hFE
DC Current Gain(hFE) |
80 |
| 截止频率fT
Transtion Frequency(fT) |
150MHz |
| 耗散功率Pc
Power Dissipation |
0.15W/150mW |
| Description & Applications |
Silicon NPN epitaxial planer transistr For digital circuits Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. |
| 描述与应用 |
NPN硅外延平面晶体管的 用于数字电路 特性 成本可降低通过减员设备和 减少部件的数量。 迷你型包装，使瘦身的设备和 通过自动插入磁带包装盒包装 |
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