BFP181TRW-GS08 WS 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
10V |
| 集电极连续输出电流IC
Collector Current(IC) |
20mA |
| 截止频率fT
Transtion Frequency(fT) |
8Ghz |
| 直流电流增益hFE
DC Current Gain(hFE) |
50~150 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
400mV/0.4V |
| 耗散功率Pc
Power Dissipation |
160mW/0.16W |
| Description & Applications |
NPN Silicon Planar RF Transistor Features ? Low noise figure ? High power gain ? Lead (Pb)-free component ? Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. |
| 描述与应用 |
NPN硅平面RF晶体管 特点 ?低噪声系数 ?高功率增益 ?铅（Pb）免费组件 ?组件按照RoHS 2002/95/EC和WEEE2002/96/EC 应用 对于低噪声和高增益宽带放大器 集电极电流从0.5 mA到12 mA。 |
| 技术文档PDF下载 |
在线阅读  |
