SSM6J21TU KPA 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-12V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V |
| 最大漏极电流Id
Drain Current |
-3A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
88m?@ VGS = -2.5V, ID = -1.5A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.5~-1.1V |
| 耗散功率Pd
Power Dissipation |
500mW/0.5W |
| Description & Applications |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) High Current Switching Applications ? Suitable for high-density mounting due to compact package ? Low on resistance:Ron = 88 mΩ (max) (@VGS = -2.5 V) |
| 描述与应用 |
东芝场效应晶体管硅P沟道MOS类型（U-MOSⅢ） 高电流开关应用 ?适用于高密度安装由于紧凑的封装 ?低导通电阻:Ron = 88 mΩ (max) (@VGS = -2.5 V) |
| 技术文档PDF下载 |
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