MGSF1N02ELT1 NE 的参数 |
最大源漏极电压Vds
Drain-Source Voltage |
20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage |
8V |
最大漏极电流Id
Drain Current |
750mA/0.75A |
源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
|
开启电压Vgs(th)
Gate-Source Threshold Voltage |
0.5-1.0V |
耗散功率Pd
Power Dissipation |
400mW/0.4W |
Description & Applications |
Part of the GreenLine? Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on)assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management circuitry. Typical applications are dc–dc converters and power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. ? Low rDS(on) Provides Higher Efficiency and Extends Battery Life ? Miniature SOT–23 Surface Mount Package Saves Board Space ? Low RDS(on) Provides Higher Efficiency and Extends Battery Life ? Miniature SOT–23 Surface Mount Package Saves Board Space |
描述与应用 |
部分莱恩?设备组合与能源 节约性状。 这些微型表面贴装MOSFET采用摩托罗拉 高密度,HDTMOS过程。低RDS(ON)保证 最小的功率损耗和节省能源,使这个装置 使用空间敏感的电源管理电路的理想选择。 典型的应用是在便携式和电池供电产品,如DC-DC转换器和电源管理 电脑,打印机,PCMCIA卡,蜂巢式和无绳 电话。 ?低RDS(ON) 提供更高的效率和延长电池寿命 ?微型SOT-23表面贴装封装节省电路板空间 ?低的RDS(on) 提供更高的效率和延长电池寿命 ?微型SOT-23表面贴装封装节省电路板空间 |
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