SI5480DU ADH 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
12A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
13m?@ VGS = 10V, ID = 7.2A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
1V~3V |
| 耗散功率Pd
Power Dissipation |
3.1W |
| Description & Applications |
N-Channel 30-V (D-S) MOSFET FEATURES ? Halogen-free ? TrenchFET? Power MOSFET ? New Thermally Enhanced PowerPAK? ChipFET? Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile APPLICATIONS ? Load Switch, PA Switch, and Battery Switch for Portable Applications ? DC-DC Synchronous Rectification |
| 描述与应用 |
N沟道30-V（D-S）的MOSFET 特点 ??TrenchFET功率MOSFET - 小占位面积 - 低导通电阻 应用 ??负荷开关，PA开关，电池开关用于便携式应用 ??DC-DC同步整流 |
| 技术文档PDF下载 |
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