BUK481-100A 41-10A 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
100V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
30V |
| 最大漏极电流Id
Drain Current |
1A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.80Ω/Ohm @1A10v, |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
2.1-4.0V |
| 耗散功率Pd
Power Dissipation |
1.5W |
| Description & Applications |
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in Ptot Total power dissipation 1.5 W automotive and general purpose Tj Junction temperature 150 ?C switching applications |
| 描述与应用 |
功率MOS晶体管 逻辑电平TOPFET N沟道增强型场效应功率晶体管在 塑料信封适合表面贴装应用。该设备是为了在P合计使用 总功耗为1.5 W 汽车和通用TJ 结温150?C 开关应用 |
| 技术文档PDF下载 |
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