RN2104MFV YD 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-100mA/-0.1A |
| 基极输入电阻R1
Input Resistance(R1) |
47KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
80 |
| 截止频率fT
Transtion Frequency(fT) |
250MHz |
| 耗散功率Pc
Power Dissipation |
0.15W/150mW |
| Description & Applications |
Features ? Transistor Silicon PNP Epitaxial Type (PCT Process) ? Ultra-small package, suited to very high density mounting ? Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. ? A wide range of resistor values is available for use in various circuits. ? Complementary to the RN1101MFV to RN1106MFV Applications ? Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| 描述与应用 |
特点 ?晶体管的硅PNP外延型（PCT工艺） ?超小型封装，适合高密度安装 ?结合到晶体管的偏置电阻器，降低了部件的数目， 所以使制造的更加紧凑的设备和降低 装配成本。 ?宽范围的电阻值是可用于在各种电路。 ?互补RN1101MFV RN1106MFV 应用 ?开关，逆变电路，接口电路和驱动器电路应用 |
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