UNR5116JWL 6F 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-100mA/-0.1A |
| 基极输入电阻R1
Input Resistance(R1) |
4.7KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
|
| 电阻比(R1/R2)
Resistance Ratio |
|
| 直流电流增益hFE
DC Current Gain(hFE) |
160~460 |
| 截止频率fT
Transtion Frequency(fT) |
150MHz |
| 耗散功率Pc
Power Dissipation |
0.15W/150mW |
| Description & Applications |
Features ?Transistors with built-in Resistor ?Silicon PNP epitaxial planer transistor ?Costs can be reduced through downsizing of the equipment and reduction of the number of parts ?S-Mini type package, allowing automatic insertion through the tape magazine packing |
| 描述与应用 |
特点 ?内置电阻晶体管 ?硅PNP外延刨床晶体管 ?成本可以降低通过减员设备和减少部件的数量 ?S-迷你型包装，允许通过自动插入磁带盒包装 |
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