BFP182R RG 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
15V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
12V |
| 集电极连续输出电流IC
Collector Current(IC) |
35mA |
| 截止频率fT
Transtion Frequency(fT) |
8Ghz |
| 直流电流增益hFE
DC Current Gain(hFE) |
50~200 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
250mW/0.25W |
| Description & Applications |
NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz |
| 描述与应用 |
NPN硅RF晶体管 低噪声，高增益宽带放大器集电极电流从1 mA到20 mA FT =8 GHz的 F =1.2分贝(在900 MHz时) |
| 技术文档PDF下载 |
在线阅读  |
