SSM6J206FE KR 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
8V |
| 最大漏极电流Id
Drain Current |
-2A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
320m?@ VGS = -1.8V, ID = -200mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.3~-1.0V |
| 耗散功率Pd
Power Dissipation |
500mW/0.5W |
| Description & Applications |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications Power Management Switch Applications ? 1.8V drive ? P-ch 2-in-1 ? Low ON-resistance:Ron = 320 mΩ (max) (@VGS = -1.8 V) Ron = 186 mΩ (max) (@VGS = -2.5 V) Ron = 130 mΩ (max) (@VGS = -4.0 V) |
| 描述与应用 |
东芝场效应晶体管的硅P沟道MOS类型 高速开关应用 电源管理开关应用 ?1.8V驱动 ?P沟道2合1 ?低导通电阻:Ron = 320 mΩ (max) (@VGS = -1.8 V) Ron = 186 mΩ (max) (@VGS = -2.5 V) Ron = 130 mΩ (max) (@VGS = -4.0 V) |
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