SSM6J26FE PI 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
8V |
| 最大漏极电流Id
Drain Current |
-0.5A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
980m?@ VGS = -1.8V, ID = -250mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.5~-1.1V |
| 耗散功率Pd
Power Dissipation |
500mW/0.5W |
| Description & Applications |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) High Speed Switching Applications ? Optimum for high-density mounting in small packages ? Low on-resistance:Ron = 230mΩ (max) (@VGS = -4 V) Ron = 330mΩ (max) (@VGS = -2.5 V) Ron = 980mΩ (max) (@VGS = -1.8 V) |
| 描述与应用 |
东芝场效应晶体管硅P沟道MOS类型（U-MOSIII） 高速开关应用 ?最适用于高密度安装在小包装 ?低导通电阻:Ron = 230mΩ (max) (@VGS = -4 V) Ron = 330mΩ (max) (@VGS = -2.5 V) Ron = 980mΩ (max) (@VGS = -1.8 V) |
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