RN2107ACT D6 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-80mA |
| 基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
0.213 |
| 直流电流增益hFE
DC Current Gain(hFE) |
80 |
| 截止频率fT
Transtion Frequency(fT) |
200MHz |
| 耗散功率Pc
Power Dissipation |
0.1W/100mW |
| Description & Applications |
Features ? Transistor Silicon PNP Epitaxial Type (PCT Process) ? Extra small package (CST3) is applicable for extra high density fabrication. ? Incorporating a bias resistor into a transistor reduces parts count. ? Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. ? Complementary to RN1107ACT to RN1109ACT Applications ? Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| 描述与应用 |
特点 ?晶体管的硅PNP外延型（PCT工艺） ?超小型封装（CST3）是适用于额外的高密度制造。 ?将偏置电阻晶体管，减少了部件数量。 ?减少零件计数使能更加紧凑的设备制造和节省组装成本。 ?互补RN1107ACT的到RN1109ACT 应用 ?开关，逆变电路，接口电路和驱动器电路应用 |
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