茂业电子---BF998的库存详细介绍

型号：	BF998
标记/丝印/代码/打字：	MO
厂家：	NXP/PHILIPS
封装：	SOT-143
批号：	05+
库存数量：	0
所属分类：	场效应管FET MOSFET-N沟道MOSFET N-Channel
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BF998 MO 的参数
最大源漏极电压Vds Drain-Source Voltage	12V
最大栅源极电压Vgs(±) Gate-Source Voltage
最大漏极电流Id Drain Current	30mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs（th） Gate-Source Threshold Voltage	2V
耗散功率Pd Power Dissipation	200mW/0.2W
Description & Applications	Silicon N-channel dual-gate MOS-FETs VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. FEATURES ? Short channel transistor with high forward transfer admittance to input capacitance ratio ? Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS ? VHF and UHF applications with 12 V supply voltage,such as television tuners and professional communications equipment. DESCRIPTION Depletion type field effect transistor in a plastic microminiature SOT143 or SOT143R package with source and substrate interconnected. The transistors are protected against excessive input voltage surges by integrated diodes between gates and source.
描述与应用	硅N沟道双栅MOS场效应管 VHF和UHF的应用程序具有12伏电压的电源电压，诸如电视调谐器和专业的通信设备。特点 ?短沟道晶体管输入电容比具有较高的正向传输导纳 ?低噪声增益控制放大器高达1 GHz。应用 ?VHF和UHF应用具有12伏电压的电源电压，如电视调谐器和专业的通信设备。说明耗尽型场效应晶体管在一个塑料超小型SOT143封装SOT143R相互连接的源和衬底。晶体管保护，以防止过高的输入电压浪涌门和源之间的集成二极管
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