2SA1235A MF 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
?50V |
| 集电极连续输出电流IC
Collector Current(IC) |
?200mA/-0.2A |
| 截止频率fT
Transtion Frequency(fT) |
180MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
250~500 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
-300mV/-0.3V |
| 耗散功率Pc
PoWer Dissipation |
200mW/0.2W |
| Description & Applications |
Plastic-Encapsulated Transistors FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ |
| 描述与应用 |
塑料封装晶体管 特点 ??????? ???功耗 ????????????????????????PCM：0.2 W（T环境温度= 25℃） ???集电极电流 ????????????????????????ICM：-0.2à ???集电极 - 基极电压 ????????????????????????V（BR）CBO：-60 V ???操作和存储结温范围 ????????????????????????TJ，TSTG：-55℃至+150℃ |
| 技术文档PDF下载 |
在线阅读  |
