2SA1871 GA2 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
?600V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
?600V |
集电极连续输出电流IC
Collector Current(IC) |
-1A |
截止频率fT
Transtion Frequency(fT) |
30MHz |
直流电流增益hFE
DC Current Gain(hFE) |
40~80 |
管压降VCE(sat)
Collector-Emitter SaturationVoltage |
-300mV/-0.3V |
耗散功率Pc
PoWer Dissipation |
2W |
Description & Applications |
PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING FEATURES ? New package with dimensions in between those of small signal and power signal package ? High voltage ? Fast switching speed ? Complementary transistor with 2SC4942 |
描述与应用 |
PNP硅三重扩散型晶体管高速高压开关 特点 ?新的封装,尺寸之间的小信号和功率信号包 ?高电压 ?开关速度快 ?互补晶体管2SC4942 |
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