2SB1220-S IS 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-150V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
?150V |
| 集电极连续输出电流IC
Collector Current(IC) |
-50mA |
| 截止频率fT
Transtion Frequency(fT) |
200MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
185~330 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
-1000mV/-1V |
| 耗散功率Pc
PoWer Dissipation |
150mW/0.15W |
| Description & Applications |
PNP Silicon epitaxial planar transistor For high breakdown voltage low-noise amplification Complementary to 2SD1821 Features High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package |
| 描述与应用 |
PNP硅外延平面晶体管 对于高击穿电压低噪声放大 补充型2SD1821 特点 高集电极发射极电压VCEO。 低噪声电压NV。 S-迷你型封装 |
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