2SB709A-R BR 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-45V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
?45V |
| 集电极连续输出电流IC
Collector Current(IC) |
?100mA/-0.1A |
| 截止频率fT
Transtion Frequency(fT) |
80MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
210~340 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
?500mV/-0.5V |
| 耗散功率Pc
PoWer Dissipation |
200mW/0.2W |
| Description & Applications |
PNP Silicon epitaxial planar transistor For general amplification Complementary to 2SD601A Features High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. |
| 描述与应用 |
PNP硅外延平面晶体管 对于一般放大 补充型2SD601A 特点 高FOWARD电流传输比HFE。 迷你型包装，让瘦身带包装盒包装的设备和通过自动插入。 |
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