2SB710A-S DS 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
?50V |
| 集电极连续输出电流IC
Collector Current(IC) |
?500mA/-0.5A |
| 截止频率fT
Transtion Frequency(fT) |
200MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
170~340 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
?600mV/-0.6V |
| 耗散功率Pc
PoWer Dissipation |
200mW/0.2W |
| Description & Applications |
PNP Silicon epitaxial planar transistor For general amplification Complementary to 2SD0602A Features Large collector current IC Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing |
| 描述与应用 |
PNP硅外延平面晶体管 对于一般的放大 补充2SD0602A 特点 大集电极电流IC 迷你型包装，让精简的设备和通过自动插入带包装盒包装 |
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