2SB772PT 772Q 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-40V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
?30V |
| 集电极连续输出电流IC
Collector Current(IC) |
-3A |
| 截止频率fT
Transtion Frequency(fT) |
80MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
100~200 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
?500mV/-0.5V |
| 耗散功率Pc
PoWer Dissipation |
1W |
| Description & Applications |
PNP Silicon epitaxial planar transistor DESCRIPTION The 2SB772 is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver. FEATURES Low saturation voltage Excellent hFE linearity and high hFE Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator. No insulator bushing required. |
| 描述与应用 |
PNP硅外延平面晶体管 说明 2SB772是适合3 W音频放大器，电压调节器，DC-DC转换器和继电器驱动器的输出级的硅PNP晶体管。 特点 低饱和电压 HFE出色的线性度和高HFE 减腹部绞痛，所需空间小而薄的封装和连接到散热器减少了麻烦。无需绝缘套管。 |
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