2SC2814F4 F4 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
30V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
20V |
| 集电极连续输出电流IC
Collector Current(IC) |
30mA |
| 截止频率fT
Transtion Frequency(fT) |
320MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
90~180 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
150mW/0.15W |
| Description & Applications |
NPN Silicon epitaxial planar Transistors High frequency general purpose Amp appliations Features Very small package enabling compactness and slimness of set. High fT and small Cre |
| 描述与应用 |
NPN硅外延平面型晶体管 高频通用放大器应用进展 特点 非常小的包装，使紧凑和纤细的设置。 高FT和低Cre |
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