2SC3130Q 1SQ 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
15V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
10V |
| 集电极连续输出电流IC
Collector Current(IC) |
50mA |
| 截止频率fT
Transtion Frequency(fT) |
1.4GHz~2.5GHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
110~220 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
500mV/0.5V |
| 耗散功率Pc
Power Dissipation |
150mW/0.15W |
| Description & Applications |
NPN Silicon epitaxial planer type For high-frequency amplification/oscillation/mixing Features High transition frequency fT. Small collector output capacitance Cob and common base reverse transfer capacitance Crb Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. |
| 描述与应用 |
NPN硅外延平面型 对于高频放大/振荡/混合 特点 高转换频率FT。 小集电极输出电容棒和常见的基极反向 传输电容CRB 迷你型包装，让瘦身带包装盒包装的设备和通过自动插入。 |
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