2SC4446 H6 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
150mA/0.15A |
| 截止频率fT
Transtion Frequency(fT) |
130MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
200~400 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
150mV/0.15V |
| 耗散功率Pc
Power Dissipation |
150mW/0.15W |
| Description & Applications |
PNP/NPN Epitaxial planar Silicon transistor Low-Frequency General-Purpose Amp Applications Very small-siezed package permitting the 2SA1687/2SC4446-applied sets to be made small and slim |
| 描述与应用 |
PNP/ NPN外延平面硅晶体管 低频 通用放大器应用 非常小的封装允许2SA1687/2SC4446的应用设置制得微小和轻薄 |
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