2SC4809 ISQ 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
15V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
10V |
| 集电极连续输出电流IC
Collector Current(IC) |
50mA |
| 截止频率fT
Transtion Frequency(fT) |
1.9GHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
75~400 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
<500mV/0.5V |
| 耗散功率Pc
Power Dissipation |
125mW/0.125W |
| Description & Applications |
Features ?Silicon NPN epitaxial planar type ?For high-frequency amplification/oscillation/mixing ?High transition frequency fT. ?Small collector output capacitance Cob and common base reverse transfer capacitance Crb ?SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
| 描述与应用 |
特点 ?NPN硅外延平面型 ?对于高频放大/振荡/混合 ?高转换频率fT。 ?小集电极输出电容芯和共基极反向传输电容CRB ?SS-迷你型包装，允许缩减设备通过自动插入磁带包装 |
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