2SC5617 Y2 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
9.0V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
6V |
| 集电极连续输出电流IC
Collector Current(IC) |
30mA |
| 截止频率fT
Transtion Frequency(fT) |
12Ghz |
| 直流电流增益hFE
DC Current Gain(hFE) |
95~140 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
140mW/0.14W |
| Description & Applications |
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES ? NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz ? S21e*2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz ? 3-pin lead-less minimold package |
| 描述与应用 |
NPN硅RF晶体管 高频低噪声 3引脚引线M迷你型 特点 ?NF= 1.5 dB。@ VCE= 3 V，IC =3毫安，F =2吉赫 ·S21E*2 ?=8.5 dB。@ VCE= 3 V，IC=10 mA时，F =2吉赫 ?3引脚引线迷你型包装 |
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