2SJ133-Z-E1 J133 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-60V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
-2A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
0.45Ω -1A,-10V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-1.0--3.0V |
| 耗散功率Pd
Power Dissipation |
20W |
| Description & Applications |
MOS FIELD EFFECT POWER TRANSISTOR P-CHANNEL POWER MOSFET FOR SWITCHING Gate drive available at logic level (VGS = ?4 V) High current control available in small dimension due to low RDS(on) (? 0.45 Ω) 2SJ133-Z is a lead process product and is ideal for mounting a hybrid IC |
| 描述与应用 |
MOS场效应功率晶体管 P沟道功率MOSFET 用于开关 栅极驱动逻辑电平（VGS=-4 V） 高电流控制由于在小尺寸，低RDS（on）（?0.45Ω） 2SJ133-Z是一款铅工艺产品，非常适合安装一个混合IC |
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