2SJ163-R 4MR 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
65 V |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
65 V |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
－2.5~－6.0mA |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
1.5~3.5V |
| 耗散功率Pd
Power Dissipation |
150mW/0.15W |
| Description & Applications |
2SJ163 Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 Features Low ON-resistance Low-noise characteristics |
| 描述与应用 |
2SJ163 硅P沟道结型场效应管 对于一般的切换 互补2SK1103 特点 低导通电阻 低噪声特性 |
| 技术文档PDF下载 |
在线阅读  |
