2SJ211 H18 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-60V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
-500mA/-0.5A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
0.8Ω @-500mA,-10V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-1.0--3.0V |
| 耗散功率Pd
Power Dissipation |
2W |
| Description & Applications |
MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FET FOR SWITCHING Directly driven by ICs having a 5V power supply Has low on-state resistance |
| 描述与应用 |
MOS场效应晶体管 P沟道MOS FET用于开关 直接驱动5V电源IC 具有低导通电阻 |
| 技术文档PDF下载 |
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