2SK1062 KE 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
60V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
200mA/0.2A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.6Ω/Ohm @50mA,10V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
2-3.5V |
| 耗散功率Pd
Power Dissipation |
200mW/0.2W |
| Description & Applications |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switching Applications Interface Applications Features High Speed Switching Applications Analog Switching Applications Interface Applications Excellent switching time: ton = 14 ns (typ.) High forward transfer admittance: |Yfs| = 100 ms (min) @ID = 50 mA Low on resistance: RDS (ON) = 0.6 ? (typ.) @ ID = 50 mA Enhancement-mode Complementary to 2SJ168 |
| 描述与应用 |
东芝场效应晶体管的硅N沟道MOS类型 高速开关应用模拟开关应用 接口应用 特性 高速开关 应用模拟开关应用 接口应用 出色的开关时间：ton=14 ns（典型值 高正向转移导纳：YFS| =100 ms（最小@ ID=50毫安 低导通电阻RDS（ON=0.6Ω（典型值）@ ID=50毫安 增强型 互补2SJ168 |
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