2SK1299 K1299 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
100V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
3A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.25Ω/Ohm @2A,10V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
1-2V |
| 耗散功率Pd
Power Dissipation |
20W |
| Description & Applications |
Silicon N-Channel MOS FET High speed power switching Features SILICON N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR Low on-state resistance High speed switching 4V gate drive device-can be driven from 5V source Suitable for motor drive,DC-DC converter,power switch and solenoid drive |
| 描述与应用 |
硅N沟道MOS FET 高速功率开关 特性 硅N沟道MOS场效应功率晶体管 低通态电阻 高速开关 4V栅极驱动器可以驱动从5V电源 适用于电机驱动，DC-DC转换器，电源开关和螺线管驱动 |
| 技术文档PDF下载 |
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