2SK1591 G18 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
100V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
200mA/0.2A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
4.8Ω/Ohm @10mA,10V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.8-1.8V |
| 耗散功率Pd
Power Dissipation |
200mW/0.2W |
| Description & Applications |
N-CHANNEL MOS FET FOR SWITCHING Directly driven by ICs having a 5V power source Not necessary to consider driving current because of its high input impedance Has high voltage and high-speed switching characteristics |
| 描述与应用 |
N沟道MOS FET的切换 直接被带有5V电源的IC驱动 不必考虑驱动电流，因为它的高输入阻抗 具有高电压和高速开关特性 |
| 技术文档PDF下载 |
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