2SK18600S2MC 1HS 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
|
| 最大漏极电流Id
Drain Current |
|
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
|
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
|
| 耗散功率Pd
Power Dissipation |
200mW/0.2W |
| Description & Applications |
Silicon Junction FETs (Small Signal) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone Features Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone High mutual conductance Gm Low noise voltage of NV |
| 描述与应用 |
硅结场效应晶体管（小信号） 硅N沟道结型场效应管 在低频率的阻抗变换 对于驻极体电容式麦克风 特性 硅N沟道结型场效应管 在低频率的阻抗变换 对于驻极体电容式麦克风 高互导Gm 低噪声电压NV |
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