2SK198-R 10R 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
30v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-30v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
4~12ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-0.1~-1.5v |
| 耗散功率Pd
Power Dissipation |
150mW/0.15W |
| Description & Applications |
Silicon N-Channel Junction FET ?For low-frequency amplification ?High mutual conductance gm ?Low noise type |
| 描述与应用 |
硅N沟道结型场效应管 ?对于低频放大 ?高互导GM ?低噪音型 |
| 技术文档PDF下载 |
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