2SK2969 GK 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
10V |
| 最大漏极电流Id
Drain Current |
800mA/0.8A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.28Ω/Ohm @400mA,4V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.4-1.3V |
| 耗散功率Pd
Power Dissipation |
250mW/0.25W |
| Description & Applications |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Ultrahigh-Speed Switching Applications Low ON resistance Ultrahigh-speed switching 2.5V drive |
| 描述与应用 |
N-沟道硅MOSFET 超高速开关应用 特性 超高速开关应用 低导通电阻 超高速开关 2.5V驱动 |
| 技术文档PDF下载 |
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