茂业电子---2SK3503-T1的库存详细介绍

型号：	2SK3503-T1
标记/丝印/代码/打字：	E1
厂家：	NEC
封装：	SOT-523/SC-75
批号：	08+rohs
库存数量：	30000
所属分类：	场效应管FET MOSFET-N沟道MOSFET N-Channel
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2SK3503-T1 E1 的参数
最大源漏极电压Vds Drain-Source Voltage	16V
最大栅源极电压Vgs(±) Gate-Source Voltage	7V
最大漏极电流Id Drain Current	100mA/0.1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance	0.005Ω/Ohm @10mA,4V
开启电压Vgs（th） Gate-Source Threshold Voltage	0.5-1.1V
耗散功率Pd Power Dissipation	200mW/0.2W
Description & Applications	MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK3503 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras. Features N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING Automatic mounting supported Gate can be driven by a 1.5 V power source Because of its high input impedance, there’s no need to consider a drive current Since bias resistance can be omitted, the number of components required can be reduced
描述与应用	MOS场效应晶体管 N沟道MOS场效应晶体管用于高速开关说明 2SK3503一个N沟道垂直MOS FET。因为它可以由低至1.5 V的电压，这是不必要考虑驱动电流，这FET是理想的作为执行器的低电流的便携式系统，如耳机音响和摄像机。特性 N沟道MOS场效应晶体管用于高速开关支持自动安装门可以由一个1.5 V电源由于其高输入阻抗，有没有需要考虑的驱动电流由于偏置电阻可以省略，可以减少所需的部件数量
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