2SK508 K53 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
15v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-15v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
25~50ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-0.6~-3.5v |
| 耗散功率Pd
Power Dissipation |
200mW/0.2W |
| Description & Applications |
HIGH FREQUENCY AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR ?HIGH FREQUENCY AMPLIFIER ?Low input capacitance Ciss = 4.8 pF TYP. (VDS = 5.0 V, ID = 10 mA, f = 1.0 MHz) ? High forward transfer admittance | yfs |2 = 26 mS TYP. (VDS = 5.0 V, VGS = 0 V, f = 1.0 kHz) |
| 描述与应用 |
高频放大器 N-沟道硅结型场效应晶体管 ?高频放大器 ?低输入电容 ???西斯=4.8 pF的TYP。 （VDS=5.0 V，ID=10 mA时，F =1.0兆赫） ?高正向转移导纳 ?|的YFS|2= 26 ms典型。 （VDS= VGS=0 V，5.0 V，f = 1.0千赫） |
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