2SK853A K24 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
50v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-50v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
0.5~12ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-0.25~-4.5v |
| 耗散功率Pd
Power Dissipation |
150mW/0.15W |
| Description & Applications |
?Silicon N-Channel Junction FET AF&RF AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR The 2SK853, 2SK853A are designed for hybrid IC which is designed for use in analog-switch, variable-resistor, RF amplifier and AF amplifier |
| 描述与应用 |
?硅N沟道结型场效应管 AF＆RF放大器 N-沟道硅结型场效应晶体管 2SK8532SK853A是专为混合IC，其目的是使用模拟开关，可变电阻器，RF放大器和AF放大器 |
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