2SK880-Y XY 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
50v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-50v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
1.2~3ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-0.2~-1.5v |
| 耗散功率Pd
Power Dissipation |
100mW/0.1W |
| Description & Applications |
?Field Effect Transistor Silicon N Channel Junction Type ?Audio Frequency Low Noise Amplifier Applications ? High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 ? High breakdown voltage: VGDS = ?50 V ? Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k? ? High input impedance: IGSS = ?1 nA (max) at VGS = ?30 V |
| 描述与应用 |
?场效应晶体管的硅N沟道结型 ?音频频率低噪声放大器的应用 ?高| YFS|：| YFS|= 15毫秒（典型值），在VDS=10V，VGS=0 ?高击穿电压：VGDS=-50 V ?低噪音：NF=1.0分贝（典型值） ??在VDS= 10 V，ID=0.5毫安，F=1千赫，RG=1kΩ的 ?高输入阻抗：IGSS= -1娜在VGS=-30 V（最大值） |
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