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3SK241-Q DUQ 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
13V |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-6V |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
8.5mA-35mA |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-3.5V |
| 耗散功率Pd
Power Dissipation |
200mW/0.2W |
| Description & Applications |
High Frequency FETs.
GaAs N-Channel MES FET.
For VHF-UHF amplification.
Features:
. Low noise-figure (NF)
. Large power gain PG
. Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. |
| 描述与应用 |
高频场效应管 ,砷化镓N沟道MES, 场效应管 ,用于甚高频-超高频放大, 低噪声系数（NF）, 大功率增益PG ,迷你型包装，通过带/盒包装允许缩减集的大小和自动插入. |
| 技术文档PDF下载 |
在线阅读  |
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相关型号列表 |
| 型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
详细资料 |
| 3SK240 |
UN |
TOSHIBA |
05+ |
SOT-143 |
0 |
场效应管FET-MESFET-N沟道MESFET N-Channel |
查看 |
| 3SK241 |
DU |
Panasonic |
05+ |
SOT-143 |
200 |
场效应管FET-MESFET-N沟道MESFET N-Channel |
查看 |
| 3SK241-Q |
DUQ |
Panasonic |
05+ |
SOT-143 |
18 |
场效应管FET-MESFET-N沟道MESFET N-Channel |
查看 |
| 3SK241-R |
DUR |
Panasonic |
05+ |
SOT-143 |
100 |
场效应管FET-MESFET-N沟道MESFET N-Channel |
查看 |
| 3SK242 |
V12 |
NEC |
05+ |
SOT-343/SC70-4 |
376 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
| 3SK242 |
V12 |
NEC |
05+ |
SOT-343/SC70-4 |
0 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
| 3SK249 |
UO |
TOSHIBA |
05+ |
SOT-343/SMQ/SC-61 |
6000 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
| 3SK249 |
UO |
TOSHIBA |
05+NOPB1600 |
SOT-343/SMQ/SC-61 |
3100 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
| 3SK241-Q |
DUQ |
Panasonic |
05+ |
SOT-143 |
0 |
场效应管FET-MESFET-N沟道MESFET N-Channel |
查看 |
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