* Build in Biasing Circuit MOS FET IC.
* VHF/UHF RF Amplifier.
* Build in Biasing Circuit; To reduce using parts cost & PC board space.
* High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)
* Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions.